The Doping Effect On Structural, Optical And Electrical Properties Of SnO 2 Thin Films Synthesized By The Sol gel Method.
Faten Ziani 1 , Abid Boudiar 2 1 University of Tébessa, Laboratory of Applied and Théorical Physics (L.P.A.T) , Algeria
 Method, C., al.: Studies on SnO 2 Nanoparticles Prepared by Co-Precipitation Method. J. Nanosci. Nanotechnol . 18, 3511–3517 (2018).  Zhang, J., Gao , L.: J. Solid State Chem. 177, 1425 (2004).  Haiping He, in Solution Processed Metal Oxide Thin Films for Electronic Applications,2020.  Burstien , E.: Phys. Rev. 93, 632-633 (1954).  Moss, T.S.: J. Proc. Phys. Soc. B. 67, 775-782 (1954).
(TCO) are one among the foremost important group of material with numerous modern applications in different fields. It has recently attracted a considerable amount of attention due to their unique proprieties. It h as been widely generate considerable interest in several fields of research and technological application as sensors, detectors, photovoltaic cells, and catalytic performance etc. Tin oxide (SnO 2 ) is a material belonging to the transparent conducting oxide (TCO) family, classified as n-type semiconductor with a wide band gap of 3.6–3.8 eV .its excellent optical transparency and conductivity electrical) . SnO 2 exhibits greatly increased electric conductivity then become transparent for visible light and reflective for IR radiation .
• Deposit of thin layers The substrates glass were dipped in the solution for 60 s and pulled out with slow and uniform pulling rate of approximately 80 mm/min. The substrate was allowed to dray in the oven tubular at 400 c° for 10 min . Thin film of SnO2 was formed on the substrate, which was further annealed in an oven tubular at 500 c° for 2h. • Preparation of the solution The Sno2 solution is prepared from an precursor of tin chloride, it was dissolved in ethanol and acetic acid. The solution was gently stirred by a magnetic stierrer at 60 c° until a powder is achieved. The quantities of solvent and catalyst were added to the resulting powder, stirred at 70 c° for 2h until a transparent and homogeneous solution is achieved.
XRD analysis has shown that our thin films deposited on glass substrates have a tetragonal structure rutile type. The layers obtained are characterized by a strong transmittance of the order of 80% to 99% in the visible and they are opaque in the UV. The introduction of Al dopant into the lattice increased the gap. This increase in the gap is explained by the Burstein-Moss [4,5].
7.5 ml acetic acid
SnCl 2 2H 2 O
42.5 mL Éthanol
Mixing + heating at 60°C with stirring , open beaker
Powder is achieved
CH 3 COOH 7.5 ml
C 2 H 5 OH 42.5 mL
Mixing + heating at 70°C with stirring for 2 hours , closed beaker
transparent and homogeneous solution is achieved
Drying ( 400°C, 10min )and annealed ( 500°C, 2h )
Formation of a Thin Layer of SnO2 undoped and doped with Al .
The Hall effect allowed us to confirm that our layers exhibit n-type conductivity. the effect of Al and Sb doping produces higher conductivity.
Table 1 : Structural properties of SnO2 thin layer elaborate by sol-gel .
Fig 1 : XRD Spectra of SnO 2 thin layer elaborate by Sol-gel.
Fig 2 : XRD Spectra of SnO 2 thin layer doped by Al .
Table 2: Table 3: Lattice parameters and grain size of SnO2 doped by Al 9%,
Table 3 : The values of Optical gap and refractive index
Table 4 : The electrical characterizations values of SnO 2.
by Hall Effect
by UV-Visible spectroscopy